CXDM1002N mosfet equivalent, surface mount n-channel enhancement-mode silicon mosfet.
* Low rDS(ON) (140mΩ TYP @ VGS=4.5V)
* High voltage (VDS=100V)
* Logic level compatibility
* 2kV ESD protection
MAXIMUM RATINGS: (TA=25°C) Drain-Source .
This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.
MARKING: FULL PART NUMBER.
The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage cu.
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